Charge trapping on different cuts of a single-crystalline LPS~O~
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چکیده
A scanning electron microscope is employed for the investigation of charging on different cuts of an a-SiO,. A method for the determination of trapped charges is proposed. Charging on different cuts is observed to decrease in the order of z cut, 30” cut, 45” cut, and 60“ cut of the a-Si02. This phenomenon is related to permittivity, defect density, and stress of the samples. Details of the experiments and the method of charge determination are given.
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تاریخ انتشار 1999